| PART |
Description |
Maker |
| IBM13N64734HCA |
64M x 72 Two-Bank Unbuffered SDRAM Module(64M x 64 2组不带缓冲同步动态RAM模块) 64米72双行缓冲内存模组4米64 2组不带缓冲同步动态内存模块）
|
International Business Machines, Corp.
|
| TC58NS512DC |
512-MBIT (64M x 8 BITS) CMOS NAND E 2 PROM (64M BYTE SmartMedia TM)
|
TOSHIBA
|
| HYS64V64220GU HYS72V64220GU |
3.3 V 64M 64-Bit SDRAM Modules(3.3 V 64M 64/72-Bit 2 个存储体SDRAM 模块)
3.3 V 64M 72-Bit SDRAM Modules(3.3 V 64M 64/72-Bit 2 个存储体SDRAM 模块)
|
SIEMENS AG
|
| AM29LV640DL90ZI AM29LV641DL90EI |
64M X 16 FLASH 3V PROM, 90 ns, PDSO56
64M X 16 FLASH 3V PROM, 90 ns, PDSO48
|
SPANSION LLC
|
| H5PS1G63EFR-C4I H5PS1G63EFR-E3C H5PS1G63EFR-G7Q H5 |
1Gb DDR2 SDRAM
64M X 16 DDR DRAM, 0.35 ns, PBGA84
64M X 16 DDR DRAM, 0.4 ns, PBGA84
|
HYNIX SEMICONDUCTOR INC
|
| EDS6416AHBH-75-E EDS6416CHBH-75-E |
64M bits SDRAM (4M words x 16 bits) 4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA60
64M bits SDRAM (4M words x 16 bits) 6400位的SDRAM4分字× 16位）
|
Elpida Memory, Inc.
|
| MT18LSDT6472AIY-133XX MT18LSDT6472AG-133XX MT18LSD |
64M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168 LEAD FREE, DIMM-168
64M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168 DIMM-168
|
Unisonic Technologies Co., Ltd.
|
| V58C2512164SBI5 V58C2512804SBJ5 V58C2512804SBLE5 |
32M X 16 DDR DRAM, 0.7 ns, PDSO66
64M X 8 DDR DRAM, 0.7 ns, PBGA60
64M X 8 DDR DRAM, 0.7 ns, PDSO66
|
PROMOS TECHNOLOGIES INC
|
| K9K1208U0M K9K1208U0M-YCB0 K9K1208U0M-YIB0 K9K1216 |
64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
64M x 8 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| M2V64S20BTP-8A M2V64S30BTP-8A M2V64S40BTP-8A |
64M bit Synchronous DRAM
|
Mitsubishi Electric Corporation
|
